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| 2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com * Low Collector-Emitter Saturation Voltage - * VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available* MAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwise noted) Rating Symbol VCEO VCB IC IB Value 60 60 30 Collector-Emitter Voltage Collector-Base Voltage Unit Vdc Vdc Adc Adc 30 AMPERES POWER TRANSISTOR NPN SILICON 60 VOLTS, 200 WATTS PD, POWER DISSIPATION (WATTS) II I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII II I I III I I IIIIIIIIIIIIIIIIIII II III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III III IIIIIIIIIIIIIIIIIII III IIII I IIIIIIIIIIIIIIIIIII III III II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII Collector Current - Continuous (Note 2) Base Current 7.5 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.14 W W/_C _C TJ, Tstg - 65 to + 200 THERMAL CHARACTERISTICS Characteristic Symbol qJC qCA Max Unit TO-204AA (TO-3) CASE 1-07 STYLE 1 Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Ambient 0.875 34 _C/W _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. TA TC 8.0 200 6.0 150 MARKING DIAGRAM 2N5302G AYYWW MEX TC 4.0 100 TA 2.0 50 2N5302 G A YY WW MEX 160 180 200 = Device Code = Pb-Free Package = Location Code = Year = Work Week = Country of Origin 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) ORDERING INFORMATION Device 2N5302 Package TO-204 TO-204 (Pb-Free) Shipping 100 Units/Tray 100 Units/Tray Figure 1. Power Temperature Derating Curve *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 2N5302G 1 March, 2006- Rev. 2 Publication Order Number: 2N5302/D III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIII II I I IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII 3. Indicates JEDEC Registered Data. 4. Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING CHARACTERISTICS (Note 3) DYNAMIC CHARACTERISTICS (Note 3) ON CHARACTERISTICS OFF CHARACTERISTICS (Note 3) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Storage Time Rise Time Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) Current-Gain - Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Base-Emitter On Voltage (Note 4) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) *Base Emitter Saturation Voltage (Note 4) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) *Collector-Emitter Saturation Voltage (Note 4) (IC = 10 Adc, IB = 1.0 Adc) (IC = 20 Adc, IB = 2.0 Adc)2 (IC = 30 Adc, IB = 6.0 Adc) DC Current Gain (Note 4) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 4) (IC = 200 mAdc, IB = 0) +11 V -2.0 V INPUT PULSE tr 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0% Figure 2. Turn-On time 10 (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Characteristic SWITCHING TIME EQUIVALENT TEST CIRCUITS VCC 3.0 +30 V TO SCOPE tr 20 ns http://onsemi.com 2N5302 2 +11 V -9.0 V 0 INPUT PULSE tr 20 ns PW = 10 to 100 ms DUTY CYCLE = 2.0% VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX ICEX hFE hfe fT Figure 3. Turn-Off time ts tr tf Min 2.0 40 15 5.0 40 60 - - - - - - - - - - - - - 10 VBB = 7.0 V - - - D 0.75 2.0 3.0 Max 1.7 3.0 1.7 1.8 2.5 5.0 1.0 1.0 5.0 - 60 - 10 - - - 1.0 2.0 1.0 VCC 3.0 +30 V TO SCOPE tr 20 ns mAdc mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc Vdc - - ms ms ms 2N5302 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 SINGLE PULSE D = 0.5 0.2 0.1 0.05 0.01 0.02 P(pk) qJC(t) = r(t) qJC qJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 3.0 5.0 10 t, TIME (ms) 20 30 50 100 200 300 500 1000 2000 0.03 0.05 0.1 0.2 0.3 Figure 4. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 5302 5.0 ms 1.0 ms TJ = 200C Secondary Breakdown Limited Bonding Wire Limited TC = 25C Thermal Limitations Pulse Duty Cycle 10% 2N5302 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 dc 100 ms C, CAPACITANCE (pF) 3000 2000 TJ = 25C 1000 Cib 500 Cob 300 200 100 0.5 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 5. Active-Region Safe Operating Area Figure 6. Capacitance versus Voltage 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.05 td @ VOB = 2.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 30 tr @ VCC = 30 V TJ = 25C IC/IB = 10 3.0 TJ = 25C IB1 = IB2 IC/IB = 10 ts ts - 1/8 tf ts 1.0 t, TIME ( s) 0.7 0.5 t, TIME ( s) tf @ VCC = 30 V 0.3 tf @ VCC = 10 V 0.1 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 Figure 7. Turn-On Time Figure 8. Turn-Off Time http://onsemi.com 3 2N5302 300 200 hFE , DC CURRENT GAIN TJ = 175C VCE = 10 V VCE = 2.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 2.0 A 1.2 5.0 A 10 A 20 A 100 70 50 30 20 10 0.03 0.05 25C -55 C 0.8 0.4 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 9. DC Current Gain RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 10. Collector Saturation Region 108 VCE = 30 V 107 V, VOLTAGE (VOLTS) IC = 10 x ICES 106 IC = 2 x ICES 105 IC ICES 104 103 102 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 0 20 40 60 80 100 120 140 160 180 200 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.03 0.05 0.1 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.3 0.5 1.0 3.0 5.0 10 30 TJ = 25C TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base-Emitter Resistance Figure 12. "On" Voltages VCE = 30 V IC, COLLECTOR CURRENT ( A) 102 101 V, TEMPERATURE COEFFICIENTS (mV/C) 103 TJ = 175C 100C 25C 100 IC = ICES 10-1 10- 2 10- 3 -0.4 -0.3 REVERSE FORWARD +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30 qVB for VBE(sat) *qVC for VCE(sat) TJ = -55C to +175C *APPLIES FOR IC/IB < hFE @ VCE + 2.0 V 2 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut-Off Region Figure 14. Temperature Coefficients http://onsemi.com 4 2N5302 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) U V 2 TQ M Y M L G 1 -Y- H B -Q- 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 2N5302/D |
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